Title :
The study of BST buffered BiFeO3 thin film
Author :
Hong, Dong ; Yu, Shengwen ; Cheng, Jinrong
Author_Institution :
Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China
Abstract :
In this paper, BiFeO3(BFO) thin film with and without Ba0.6Sr0.4TiO3(BST) buffer layer were deposited on Pt (111)/TiO2/SiO2/Si(100) substrate by sol-gel technique. No impurities can be detected in both films. Scanning electron microscope and atomic force microscope shows improved surface morphologies by introducing the BST buffer layer. Due to the BST layer act as insulating barrier in stopping charge movement from the BFO layer to the bottom electrode, the leakage current density decreases from 1.5×10-3A/cm2 at 267kV/cm to 1.2×10-5A/cm2 at 320kV/cm. Consequently, the ferroelectricity of BST buffered BFO thin film is remarkably enhanced with Pr of 6.7μC/cm2 at an applied electric field of 1100kV/cm.
Keywords :
atomic force microscopy; barium compounds; bismuth compounds; buffer layers; ferroelectric thin films; multiferroics; scanning electron microscopy; sol-gel processing; strontium compounds; BiFeO3-Ba0.6Sr0.4TiO3; Pt (111)-TiO2-SiO2-Si(100) substrate; atomic force microscopy; buffer layer; ferroelectricity; impurities; leakage current density; scanning electron microscopy; sol-gel technique; surface morphology; thin film; Annealing; Educational institutions; Epitaxial growth; Europe; Substrates; Temperature; Ba0.6Sr0.4TiO3; BiFeO3; Sol-gel method; buffer layer; electrical properties;
Conference_Titel :
Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-8190-3
Electronic_ISBN :
1099-4734
DOI :
10.1109/ISAF.2010.5712272
