The study of BST buffered BiFeO3 thin film

Author

Hong, Dong ; Yu, Shengwen ; Cheng, Jinrong

Author_Institution

Sch. of Mater. Sci. & Eng., Shanghai Univ., Shanghai, China

fYear

2010

fDate

9-12 Aug. 2010

Firstpage

1

Lastpage

4

Abstract

In this paper, BiFeO₃(BFO) thin film with and without Ba_0.6Sr_0.4TiO₃(BST) buffer layer were deposited on Pt (111)/TiO₂/SiO₂/Si(100) substrate by sol-gel technique. No impurities can be detected in both films. Scanning electron microscope and atomic force microscope shows improved surface morphologies by introducing the BST buffer layer. Due to the BST layer act as insulating barrier in stopping charge movement from the BFO layer to the bottom electrode, the leakage current density decreases from 1.5×10^-3A/cm² at 267kV/cm to 1.2×10^-5A/cm² at 320kV/cm. Consequently, the ferroelectricity of BST buffered BFO thin film is remarkably enhanced with P_r of 6.7μC/cm² at an applied electric field of 1100kV/cm.

Keywords

atomic force microscopy; barium compounds; bismuth compounds; buffer layers; ferroelectric thin films; multiferroics; scanning electron microscopy; sol-gel processing; strontium compounds; BiFeO₃-Ba_0.6Sr_0.4TiO₃; Pt (111)-TiO₂-SiO₂-Si(100) substrate; atomic force microscopy; buffer layer; ferroelectricity; impurities; leakage current density; scanning electron microscopy; sol-gel technique; surface morphology; thin film; Annealing; Educational institutions; Epitaxial growth; Europe; Substrates; Temperature; Ba0.6Sr0.4TiO3; BiFeO3; Sol-gel method; buffer layer; electrical properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics (ISAF), 2010 IEEE International Symposium on the

Conference_Location

Edinburgh

ISSN

1099-4734

Print_ISBN

978-1-4244-8190-3

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2010.5712272

Filename

5712272