DocumentCode :
2500276
Title :
Polarisation insensitive 1300 nm laser amplifiers employing both compressively and tensile strained quantum wells in a single active layer
Author :
Teimeijer, L.F. ; Binsma, J.J.M. ; Thijs, P.J.A. ; Van Dongen, T. ; Slootweg, R.W.M. ; Jansen, E.J. ; van der Heijden, J.M.M.
Author_Institution :
Philips Optoelectron. Centre, Eindhoven, Netherlands
fYear :
1993
fDate :
19-22 Apr 1993
Firstpage :
91
Lastpage :
94
Abstract :
Polarization insensitive operation was obtained fro 1300 nm multiple quantum well (MQW) semiconductor amplifiers by incorporating three tensile strained and four compressively strained wells in a single active layer. By the introduction of window regions at the facets, the performance could be improved even further leading to 22 dB fiber to fiber gain for both the transverse electric (TE) and transverse magnetic (TM) polarization directions. The window regions lead to a reduction of the facet reflectivity down to a value of 3 × 10-5, while at least maintaining the high chip to fiber coupling efficiency. In addition, a record low fiber coupled noise figure of 6 dB and a fiber coupled saturation output power of 13 dBm were obtained
Keywords :
laser noise; light polarisation; quantum well lasers; 1300 nm; 22 dB; 6 dB; compressively strained quantum wells; facet reflectivity; fiber coupled saturation output power; fiber to fiber gain; high chip to fiber coupling efficiency; low fiber coupled noise figure; multiple quantum well; performance; polarisation insensitive laser amplifiers; semiconductor amplifiers; single active layer; tensile strained quantum wells; transverse electric polarization; transverse magnetic polarization; window regions; Magnetic semiconductors; Operational amplifiers; Optical fiber polarization; Performance gain; Quantum well devices; Quantum well lasers; Saturation magnetization; Semiconductor lasers; Semiconductor optical amplifiers; Tellurium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
Type :
conf
DOI :
10.1109/ICIPRM.1993.380702
Filename :
380702
Link To Document :
بازگشت