Monolithic integration of 2 × 2 switch and optical amplifiers with 0 dB fibre to fibre insertion loss grown by LP-MOCVD

Author

Glastre, G. ; Rondi, D. ; Léger, S. ; Enard, A. ; Lallier, E. ; Blondeau, R. ; Papuchon, M.

Author_Institution

THOMSON-CSF, Orsay, France

fYear

1993

fDate

19-22 Apr 1993

Firstpage

80

Lastpage

83

Abstract

The fabrication and characteristics of the monolithic integration of a GaInAsP-InP 2 × 2 switch with optical amplifiers are reported. The switch device is a current injection tuned directional coupler, which can be designed for wavelength and polarization independence. This component exhibits a 0 dB fiber to fiber insertion loss at 1.5 μm with 17 dB extinction ratio and less than 6 mA driving current to switch from bar to cross state

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical directional couplers; optical fibre losses; optical switches; semiconductor lasers; GaInAsP-InP switch; LP-MOCVD; characteristics; current injection tuned directional coupler; driving current; extinction ratio; fabrication; fiber to fiber insertion loss; monolithic integration; optical amplifiers; polarization independence; wavelength independence; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical device fabrication; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Optical switches; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380705

Filename

380705