Title :
Monolithic integration of 2 × 2 switch and optical amplifiers with 0 dB fibre to fibre insertion loss grown by LP-MOCVD
Author :
Glastre, G. ; Rondi, D. ; Léger, S. ; Enard, A. ; Lallier, E. ; Blondeau, R. ; Papuchon, M.
Author_Institution :
THOMSON-CSF, Orsay, France
Abstract :
The fabrication and characteristics of the monolithic integration of a GaInAsP-InP 2 × 2 switch with optical amplifiers are reported. The switch device is a current injection tuned directional coupler, which can be designed for wavelength and polarization independence. This component exhibits a 0 dB fiber to fiber insertion loss at 1.5 μm with 17 dB extinction ratio and less than 6 mA driving current to switch from bar to cross state
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; optical directional couplers; optical fibre losses; optical switches; semiconductor lasers; GaInAsP-InP switch; LP-MOCVD; characteristics; current injection tuned directional coupler; driving current; extinction ratio; fabrication; fiber to fiber insertion loss; monolithic integration; optical amplifiers; polarization independence; wavelength independence; Integrated optics; Monolithic integrated circuits; Optical amplifiers; Optical device fabrication; Optical fiber couplers; Optical fiber devices; Optical fiber polarization; Optical switches; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380705
