DocumentCode :
2500376
Title :
Growth And Characterization Of AiGaInP Diode Lasers
Author :
Bour, D.P. ; Treat, D.W. ; Bringans, R.D. ; Geels, R.S. ; Welch, D.F.
Author_Institution :
Xerox Palo Alto Research Center
fYear :
1993
fDate :
19-21 July 1993
Keywords :
Copper; Diode lasers; Electrons; Gallium arsenide; Power lasers; Pump lasers; Quantum well lasers; Solid lasers; Temperature; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packaging/Gigabit Networks., LEOS 1993 Summer Topi
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-1284-8
Type :
conf
DOI :
10.1109/LEOSST.1993.696818
Filename :
696818
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2500376
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