DocumentCode :
2500424
Title :
Phosphorus-rich InP grown by a one step in-situ MLEK crystal growth process
Author :
Bliss, D.F. ; Adamski, J.A. ; Higgins, W.M. ; Prasad, V. ; Zach, F.X.
Author_Institution :
US Air Force Rome Lab., Hanscom AFB, MA, USA
fYear :
1993
fDate :
19-22 Apr 1993
Firstpage :
66
Lastpage :
68
Abstract :
The authors have developed a means of producing P-rich InP directly from the melt by in-situ synthesis and magnetic liquid encapsulated Kyropoulos (MLEK) growth. The in-situ process relies on injecting P vapor into pure indium to form a P-rich molten compound, followed by growth of a single crystal from the P-rich melt. Such a process is useful for investigating P-rich crystals, because they can be grown directly from the supersaturated melt. P-rich melts produce crystals which have electronic properties (deep level defects) which are different and distinct from stoichiometric or In-rich crystals. These deep levels are only found if the crystal is grown from the molten supersaturated state. When a solidified charge has been obtained and remelted again, so much phosphorus is lost that crystal grown from this two-step process do not exhibit the same deep electronic levels. The density of the measured deep level defect in P-rich crystals is low compared to the background donor concentration, so that the conductivity and mobility are similar to stoichiometric crystals
Keywords :
III-V semiconductors; crystal growth from melt; deep level transient spectroscopy; deep levels; defect states; indium compounds; semiconductor growth; InP; P-rich InP; P-rich melt; P-rich molten compound; background donor concentration; conductivity; deep level defects; electronic properties; injecting P vapor; magnetic liquid encapsulated Kyropoulos growth; mobility; one step in-situ MLEK crystal growth process; single crystal; solidified charge; stoichiometric crystals; supersaturated melt; synthesis; Crystalline materials; Crystals; Heat transfer; Indium phosphide; Laboratories; Magnetic liquids; Mechanical engineering; Shafts; Solids; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
Type :
conf
DOI :
10.1109/ICIPRM.1993.380709
Filename :
380709
Link To Document :
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