Perspectives of the VGF growth process for the preparation of low-defect InP substrate crystals

Author

Müller, G. ; Hofmann, D. ; Schäfer, N.

Author_Institution

Inst. fuer Werkstoffwissenschaften, Erlangen-Nurnberg Univ., Germany

fYear

1993

fDate

19-22 Apr 1993

Firstpage

60

Lastpage

65

Abstract

The current status of LEC (liquid encapsulated Czochralski)-type growth processes and vertical gradient freeze (VGF)-growth of InP substrate crystals is reviewed. The twinning problem presently limiting the VGF potential is discussed and strategies to overcome this defect are considered. A new type of VGF multizone furnace is introduced. VGF processing under defined thermal and constitutional boundary conditions in this apparatus based on a recently developed global numerical model offers new perspectives for the growth of low-defect InP single crystals

Keywords

III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; substrates; twinning; LEC type growth; VGF growth process; boundary conditions; global numerical model; growth; low-defect InP substrate crystals; multizone furnace; preparation; twinning problem; vertical gradient freeze; Boundary conditions; Crystalline materials; Crystals; Furnaces; Indium phosphide; Manufacturing processes; Numerical models; Raw materials; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380710

Filename

380710