Selective growth of InGaAs/InP layers by gas source MBE with atomic hydrogen irradiation

Author

Kuroda, Naotaka ; Sugou, Shigeo ; Sasaki, Tatsuya ; Kitamura, Mitsuhiro

Author_Institution

NEC Corp., Tsukuba, Ibaraki, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

52

Lastpage

55

Abstract

The first successful selective growth of high quality InGaAs/InP layers was demonstrated by gas source molecular beam epitaxy (MBE) with atomic hydrogen irradiation. It was found that high purity InP layers were obtained under the selective growth conditions and selective growth of multiple quantum well (MQW) layers with high optical quality was achieved. The photoluminescence (PL) measurement for selectively grown MQWs indicates that the PL peak-wavelengths did not depend on the mask stripe width, whereas significant peak-wavelength shift was observed when the stripe spacing width varied

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; photoluminescence; radiation effects; semiconductor growth; semiconductor quantum wells; spectral line shift; H; InGaAs-InP; InGaAs/InP layers; atomic H irradiation; gas source MBE; high optical quality; high purity InP layers; mask stripe width; multiple quantum well; peak-wavelength shift; peak-wavelengths; photoluminescence; selective growth; stripe spacing width; Atom optics; Atomic beams; Atomic layer deposition; Atomic measurements; Hydrogen; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Photoluminescence; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380712

Filename

380712