Selective MOVPE growth and its applications to optical devices

Author

Sasaki, Tatsuya ; Kitamura, Mitsuhiro ; Mito, Ikuo

Author_Institution

NEC Corp., Tsukuba, Ibaraki, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

44

Lastpage

47

Abstract

Selective metalorganic vapor phase epitaxial growth of InGaAsP/InP structures on mask-patterned planar InP substrates was studied. Ridge structures with widths around 2 μm were selectively formed on open stripe regions between pairs of mask stripes. For such narrow regions, not only lateral gas phase diffusion but also surface migration contribute to enhanced growth rate compared to growth on unmasked wafers. The surface migration processes of metalorganic species were investigated to obtain flat top surfaces in the ridge structures. Selectively grown InGaAs/InGaAsP MQW structures with flat interfaces were obtained. Composition shifts in selectively grown InGaAs layers provided an additional bandgap energy shift in thickness-modulated InGaAs quantum wells. A shift as large as 200 nm in the photoluminescence peak wavelength was obtained for simultaneously grown multiple quantum well ridge structures while maintaining flat interfaces

Keywords

III-V semiconductors; energy gap; gallium arsenide; indium compounds; interface states; photoluminescence; semiconductor growth; semiconductor quantum wells; spectral line shift; surface diffusion; vapour phase epitaxial growth; InGaAsP-InP; InGaAsP/InP structures; InP; MQW structures; bandgap energy shift; composition shifts; enhanced growth rate; flat interfaces; flat top surfaces; lateral gas phase diffusion; mask stripes; mask-patterned planar InP substrates; metalorganic vapor phase epitaxial growth; open stripe regions; optical devices; photoluminescence peak wavelength; quantum wells; ridge structures; selective MOVPE growth; surface migration; unmasked wafers; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Optical devices; Optical surface waves; Photoluminescence; Photonic band gap; Quantum well devices; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380714

Filename

380714