DocumentCode :
2500517
Title :
Improved characteristics of MOSFETs on ultra thin SIMOX
Author :
Yamaguchi, Y. ; Inoue, Y. ; Ipposhi, T. ; Nishimura, T. ; Akasaka, Y.
Author_Institution :
Mitsubishi Electr. Corp., Hyogo, Japan
fYear :
1989
fDate :
3-6 Dec. 1989
Firstpage :
825
Lastpage :
828
Abstract :
Ultra-thin silicon-on-insulator MOSFETs (T-SOI MOSFETs) with fully depleted mode operation were investigated in comparison with the bulk Si MOSFET from the viewpoint of current drivability. In the relatively long channel region, the current drivability primarily results from the effective generation of mobile charge in the channel and therefore the increase of saturation voltage and saturation current. As the channel length becomes shorter, the velocity saturation of carriers interferes with increase of saturation voltage and saturation current. However, the bulk Si MOSFET is affected by the velocity saturation more markedly on the saturation current because of its high doping concentration in the channel. Therefore, the superiority of current drivability in T-SOI MOSFET is preserved in the submicron regime. A 0.7- mu m CMOS ring oscillator with salicided T-SOI structure exhibited a 46 ps/stage delay time, which was about one generation faster than that of bulk Si devices.<>
Keywords :
CMOS integrated circuits; insulated gate field effect transistors; integrated circuit technology; oscillators; semiconductor thin films; semiconductor-insulator boundaries; 0.7 micron; 46 ps; CMOS; Si; characteristics of MOSFETs; current drivability; fully depleted mode operation; generation of mobile charge; increase of saturation voltage; long channel region; ring oscillator; salicided T-SOI structure; saturation current; submicron MOSFETs; submicron regime; ultra thin SIMOX; ultrathin SOI MOSFETs; velocity saturation of carriers; CMOS process; Doping; Laboratories; Large scale integration; MOSFETs; Research and development; Ring oscillators; Space charge; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-0817-4
Type :
conf
DOI :
10.1109/IEDM.1989.74180
Filename :
74180
Link To Document :
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