Title :
Interdiffusion of InGaAs/InGaAsP quantum wells
Author_Institution :
BNR Europe Ltd., Essex, UK
Abstract :
The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies
Keywords :
III-V semiconductors; chemical interdiffusion; diffusion barriers; etching; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs/InGaAsP quantum wells; arsine; etch pit density substrates; group V vacancies; interdiffusion; mechanism; phosphine; strain; substrate etch pit density; Capacitive sensors; Etching; Europe; Heat treatment; Impurities; Indium gallium arsenide; Indium phosphide; MOCVD; Quantum well lasers; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380718
