DocumentCode
2500583
Title
Interdiffusion of InGaAs/InGaAsP quantum wells
Author
Glew, R.W.
Author_Institution
BNR Europe Ltd., Essex, UK
fYear
1993
fDate
19-22 Apr 1993
Firstpage
29
Lastpage
32
Abstract
The author studied the interdiffusion between the InGaAs wells and InGaAs barriers as a function of phosphine and arsine pressure. The effect of strain and substrate etch pit density was explored. The interdiffusion rates for unstrained and strained quantum wells were similar, whether grown on low or high etch pit density substrates. The interdiffusion mechanism has been shown to be not due to the group V vacancies
Keywords
III-V semiconductors; chemical interdiffusion; diffusion barriers; etching; gallium arsenide; gallium compounds; indium compounds; semiconductor quantum wells; InGaAs-InGaAsP; InGaAs/InGaAsP quantum wells; arsine; etch pit density substrates; group V vacancies; interdiffusion; mechanism; phosphine; strain; substrate etch pit density; Capacitive sensors; Etching; Europe; Heat treatment; Impurities; Indium gallium arsenide; Indium phosphide; MOCVD; Quantum well lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380718
Filename
380718
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