Title :
Improved breakdown-speed tradeoff of InP/InGaAs single heterojunction bipolar transistor using a novel p--n- collector structure
Author :
Chau, Hin-Fai ; Pavlidis, Dimitris ; Ng, Geok-Ing ; Tomizawa, Keiichi ; Baker, D.M. ; Meaton, C. ; Tothill, J.N.
Author_Institution :
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
Abstract :
A novel p--n- collector design is presented for InP/InGaAs heterostructure bipolar transistors (HBTs). It shows a speed advantage over conventional n- collector designs without at the same time being handicapped in terms of breakdown voltage as would normally be the case of traditional special collector designs. The speed and breakdown-speed tradeoff superiority of the p--n- HBT over the conventional designs are shown and discussed theoretically and experimentally
Keywords :
III-V semiconductors; electric breakdown; gallium arsenide; heterojunction bipolar transistors; indium compounds; HBTs; InP-InGaAs; breakdown voltage; collector designs; improved breakdown speed tradeoff; p--n- collector structure; single heterojunction bipolar transistor; Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Notice of Violation; Solid state circuits; Thyristors;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380719
