Title :
Performance of AlInAs/GaInAs/InP microwave DHBTs
Author :
Stanchina, W.E. ; Liu, T. ; Rensch, D.B. ; MacDonald, P. ; Hafizi, M. ; Hooper, W.W. ; Lui, M. ; Allen, Y.K. ; Kargodorian, T.V. ; Wong-Quen, R. ; Williams, F.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz
Keywords :
III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1200 nm; 390 nm; 4 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP microwave DHBTs; application; collector; continuous wave output power density; double heterojunction bipolar transistors; experimental characteristics; fabrication; gas source molecular beam epitaxy; linear ICs; microwave power amplification; performance; Double heterojunction bipolar transistors; Electromagnetic heating; Etching; Fingers; Indium phosphide; Microwave transistors; Polyimides; Power generation; Power measurement; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380721
