DocumentCode
2500647
Title
Performance of AlInAs/GaInAs/InP microwave DHBTs
Author
Stanchina, W.E. ; Liu, T. ; Rensch, D.B. ; MacDonald, P. ; Hafizi, M. ; Hooper, W.W. ; Lui, M. ; Allen, Y.K. ; Kargodorian, T.V. ; Wong-Quen, R. ; Williams, F.
Author_Institution
Hughes Res. Labs., Malibu, CA, USA
fYear
1993
fDate
19-22 Apr 1993
Firstpage
17
Lastpage
20
Abstract
The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz
Keywords
III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1200 nm; 390 nm; 4 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP microwave DHBTs; application; collector; continuous wave output power density; double heterojunction bipolar transistors; experimental characteristics; fabrication; gas source molecular beam epitaxy; linear ICs; microwave power amplification; performance; Double heterojunction bipolar transistors; Electromagnetic heating; Etching; Fingers; Indium phosphide; Microwave transistors; Polyimides; Power generation; Power measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location
Paris
Print_ISBN
0-7803-0993-6
Type
conf
DOI
10.1109/ICIPRM.1993.380721
Filename
380721
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