• DocumentCode
    2500647
  • Title

    Performance of AlInAs/GaInAs/InP microwave DHBTs

  • Author

    Stanchina, W.E. ; Liu, T. ; Rensch, D.B. ; MacDonald, P. ; Hafizi, M. ; Hooper, W.W. ; Lui, M. ; Allen, Y.K. ; Kargodorian, T.V. ; Wong-Quen, R. ; Williams, F.

  • Author_Institution
    Hughes Res. Labs., Malibu, CA, USA
  • fYear
    1993
  • fDate
    19-22 Apr 1993
  • Firstpage
    17
  • Lastpage
    20
  • Abstract
    The authors report the experimental characteristics obtained from AlInAs/GaInAs/InP double heterojunction bipolar transistors (DHBTs) grown by gas source molecular beam epitaxy. They describe the fabrication and measured performance of two AlInAs/GaInAs/InP DHBT structures, one having a relatively thin 390 nm collector and the other having a relatively thick 1200 nm collector. Their performance results are presented within the context of their application to linear ICs and microwave power amplification. The results include the first reported microwave power measurements on this InP-based DHBT structure featuring a continuous wave output power density of 3.3 W/mm at 4 GHz
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; 1200 nm; 390 nm; 4 GHz; AlInAs-GaInAs-InP; AlInAs/GaInAs/InP microwave DHBTs; application; collector; continuous wave output power density; double heterojunction bipolar transistors; experimental characteristics; fabrication; gas source molecular beam epitaxy; linear ICs; microwave power amplification; performance; Double heterojunction bipolar transistors; Electromagnetic heating; Etching; Fingers; Indium phosphide; Microwave transistors; Polyimides; Power generation; Power measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
  • Conference_Location
    Paris
  • Print_ISBN
    0-7803-0993-6
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1993.380721
  • Filename
    380721