Design and fabrication of high-speed InP-based heterojunction bipolar transistors

Author

Nakajima, Hiroki

Author_Institution

NTT LSI Labs., Atsugi-shi, Kanagawa, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

13

Lastpage

16

Abstract

The author reports the use of a Monte Carlo technique to analyze the hot electron transport in InAlGaAs/InGaAs heterojunction bipolar transistors (HBTs) and to give a basis for designing high-speed HBTs. Monte Carlo simulation predicted that an abrupt-emitter/graded-base structure can provide a base transit time much shorter than that provided by a uniform-base structure or a fully-graded-base structure. The fabrication and characterization of self-aligned InP/InGaAs single- and double-HBTs (SHBTs and DHBTs) grown by metal organic chemical vapor deposition are outlined. Their circuit applications are described

Keywords

III-V semiconductors; Monte Carlo methods; bipolar digital integrated circuits; heterojunction bipolar transistors; hot carriers; indium compounds; microwave bipolar transistors; semiconductor device models; DHBTs; HBTs; InAlGaAs-InGaAs; InP-InGaAs; Monte Carlo technique; SHBTs; abrupt-emitter/graded-base structure; base transit time; characterization; circuit applications; design; digital circuits; fabrication; high-speed InP-based heterojunction bipolar transistors; hot electron transport; metal organic chemical vapor deposition; microwave applications; Chemical vapor deposition; Circuits; Double heterojunction bipolar transistors; Electrons; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Monte Carlo methods; Organic chemicals;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380722

Filename

380722