Title :
Surface emitting lasers: Materials, ultimate performances, and applications
Author_Institution :
Tokyo Inst. of Technol., Midoriku, Yokohama, Japan
Abstract :
The author compares the performance of some materials for surface emitting (SE) lasers such as GaInAsP, InGaAs, GaAlAs, and AlGaInP. In particular, a device technology toward realization of room temperature continuous-wave (CW) GaInAsP/InP SE lasers is discussed. Size effect, relative intensity noise (RIN), linewidth, spontaneous emission control, and photon recycling are outlined including optical interconnects and parallel optical fiber communication systems by featuring mode control, high power capability and extending 2-D arrays
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser noise; optical interconnections; semiconductor laser arrays; surface emitting lasers; AlGaInP; GaAlAs; GaAlAs-GaAs; GaInAs-GaAs; GaInAsP; GaInAsP-InP; InGaAs; Materials; applications; continuous-wave; device technology; high power capability; linewidth; mode control; optical interconnects; parallel optical fiber communication systems; photon recycling; relative intensity noise; room temperature; size effect; spontaneous emission control; surface emitting lasers; ultimate performances; Communication system control; Control systems; Fiber lasers; Indium gallium arsenide; Laser noise; Optical arrays; Optical control; Optical materials; Size control; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380724
