Surface emitting lasers: Materials, ultimate performances, and applications

Author

Iga, K.

Author_Institution

Tokyo Inst. of Technol., Midoriku, Yokohama, Japan

fYear

1993

fDate

19-22 Apr 1993

Firstpage

7

Lastpage

10

Abstract

The author compares the performance of some materials for surface emitting (SE) lasers such as GaInAsP, InGaAs, GaAlAs, and AlGaInP. In particular, a device technology toward realization of room temperature continuous-wave (CW) GaInAsP/InP SE lasers is discussed. Size effect, relative intensity noise (RIN), linewidth, spontaneous emission control, and photon recycling are outlined including optical interconnects and parallel optical fiber communication systems by featuring mode control, high power capability and extending 2-D arrays

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser noise; optical interconnections; semiconductor laser arrays; surface emitting lasers; AlGaInP; GaAlAs; GaAlAs-GaAs; GaInAs-GaAs; GaInAsP; GaInAsP-InP; InGaAs; Materials; applications; continuous-wave; device technology; high power capability; linewidth; mode control; optical interconnects; parallel optical fiber communication systems; photon recycling; relative intensity noise; room temperature; size effect; spontaneous emission control; surface emitting lasers; ultimate performances; Communication system control; Control systems; Fiber lasers; Indium gallium arsenide; Laser noise; Optical arrays; Optical control; Optical materials; Size control; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on

Conference_Location

Paris

Print_ISBN

0-7803-0993-6

Type

conf

DOI

10.1109/ICIPRM.1993.380724

Filename

380724