Title :
1993 (5th) International Conference on Indium Phosphide and Related Materials
Abstract :
The following topics are dealt with: high-speed heterostructure bipolar transistors (HBTs); interdiffusion in quantum well (QW) structures; selective epitaxy; photonic ICs and optical amplifiers; epitaxy; solar cells; strained layers; HFET characterization; growth mechanisms; interface technology; bulk and characterization; electron devices and processing; high electron mobility transistors (HEMTs); lasers; etching; multi-QW modulators; contacts; and doping. Abstracts of individual papers can be found under the relevant classification codes in this or other issues
Keywords :
III-V semiconductors; chemical interdiffusion; epitaxial growth; etching; field effect transistors; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; integrated optoelectronics; optical modulation; semiconductor doping; semiconductor growth; semiconductor lasers; semiconductor quantum wells; semiconductor technology; solar cells; bulk materials; high-speed heterostructure bipolar transistors; interdiffusion; photonic ICs; quantum well structures; selective epitaxy; semiconductor processing;
Conference_Titel :
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on
Conference_Location :
Paris, France
Print_ISBN :
0-7803-0993-6
DOI :
10.1109/ICIPRM.1993.380726
