Title :
Ultra-high speed CMOS circuits in thin SIMOX films
Author :
Kamgar, A. ; Hillenius, S.J. ; Cong, H.-I. ; Field, R.L. ; Lindenberger, W.S. ; Celler, G.K. ; Trimble, L.E. ; Sturm, J.C.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
CMOS dual-modulus prescaler circuits were built in very thin SIMOX films. They operate at 6.2 GHz, the highest speed ever reported for a digital CMOS circuit and 50% faster than the control circuits built in bulk Si. The high speed is obtained by taking advantage of the intrinsic properties of the SOI (silicon-on-insulator) structure combined with the symmetric CMOS technology that simultaneously optimizes the characteristics of both the p- and n-channel transistors.<>
Keywords :
CMOS integrated circuits; digital integrated circuits; integrated circuit technology; scaling circuits; semiconductor thin films; semiconductor-insulator boundaries; 6.2 GHz; CMOS dual-modulus prescaler circuits; SOI CMOS; Si-SiO/sub 2/-Si; control circuits built in bulk Si; digital CMOS circuit; intrinsic properties; symmetric CMOS technology; thin SIMOX films; Annealing; CMOS digital integrated circuits; CMOS process; CMOS technology; Capacitance; Counting circuits; Fabrication; Optical feedback; Semiconductor films; Temperature;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74181
