Title :
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198)
Abstract :
The following topics were covered: ESD and radiation effects; analog design; power devices; modelling and simulation; SiGe process technology; RF circuits and technology; process technology for RF applications; communication circuits; advanced silicon bipolar process technology; distortion, noise, and transient effects in bipolar transistors; modeling and parameter extraction
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; bipolar integrated circuits; bipolar transistors; electrostatic discharge; integrated circuit design; integrated circuit modelling; integrated circuit technology; power integrated circuits; radiation effects; telecommunication equipment; ESD; RF circuits; Si; Si bipolar process technology; SiGe; SiGe process technology; analog design; bipolar transistors; communication circuits; distortion; modelling; noise; parameter extraction; power devices; radiation effects; simulation; transient effects;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN, USA
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741859
