Title :
The effects of emitter-tied field plates on lateral PNP ionizing radiation response
Author :
Barnaby, H.J. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Kosier, S.L.
Author_Institution :
Dept. of ECE, Vanderbilt Univ., Nashville, TN, USA
Abstract :
Radiation response comparisons of lateral PNP bipolar devices manufactured with and without emitter-tied field plates are presented. The experimental results reveal that the devices with an emitter-tied field plate have higher current gain prior to exposure to ionizing radiation. However, the use of an emitter-tied field plate in total dose environments may provide no higher reliability against current gain degradation after significant amounts of radiation exposure
Keywords :
bipolar integrated circuits; bipolar transistors; integrated circuit reliability; radiation effects; semiconductor device reliability; current gain degradation; emitter-tied field plates; lateral PNP ionizing radiation response; lateral p-n-p bipolar devices; radiation exposure; radiation response comparisons; reliability; total dose environments; Analog integrated circuits; Bipolar transistor circuits; Charge carrier density; Degradation; Diodes; Integrated circuit manufacture; Ionizing radiation; Laboratories; Manufacturing; Silicon;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741876
