The effects of emitter-tied field plates on lateral PNP ionizing radiation response

Author

Barnaby, H.J. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Kosier, S.L.

Author_Institution

Dept. of ECE, Vanderbilt Univ., Nashville, TN, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

35

Lastpage

38

Abstract

Radiation response comparisons of lateral PNP bipolar devices manufactured with and without emitter-tied field plates are presented. The experimental results reveal that the devices with an emitter-tied field plate have higher current gain prior to exposure to ionizing radiation. However, the use of an emitter-tied field plate in total dose environments may provide no higher reliability against current gain degradation after significant amounts of radiation exposure

Keywords

bipolar integrated circuits; bipolar transistors; integrated circuit reliability; radiation effects; semiconductor device reliability; current gain degradation; emitter-tied field plates; lateral PNP ionizing radiation response; lateral p-n-p bipolar devices; radiation exposure; radiation response comparisons; reliability; total dose environments; Analog integrated circuits; Bipolar transistor circuits; Charge carrier density; Degradation; Diodes; Integrated circuit manufacture; Ionizing radiation; Laboratories; Manufacturing; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741876

Filename

741876