Design aspects of 32.7-GHz bandwidth AGC amplifier IC with wide dynamic-range implemented in SiGe HBT

Author

Ohhata, Kenichi ; Masuda, Toru ; Ohue, Eiji ; Washio, Katsuyoshi

Author_Institution

Hitachi Ltd., Kokubunji, Japan

fYear

1998

fDate

27-29 Sep 1998

Firstpage

39

Lastpage

42

Abstract

The design methodology for optimizing the peaking control of the variable gain amplifier stage and a self-aligned selective-epitaxial SiGe HBT allow the implementation of an AGC amplifier IC with both a wide bandwidth of 32.7 GHz and a wide input dynamic-range of 19 dB, respectively. A low noise-figure of 18 dB and a clear eye diagram at 25 Gb/s were achieved

Keywords

Ge-Si alloys; automatic gain control; bipolar MIMIC; bipolar analogue integrated circuits; heterojunction bipolar transistors; integrated circuit design; optical communication equipment; semiconductor materials; wideband amplifiers; 18 dB; 25 Gbit/s; 32.7 GHz; AGC amplifier IC; SiGe; design methodology; low noise-figure; peaking control; selective-epitaxial HBT; self-aligned SiGe HBT; variable gain amplifier stage; wide dynamic-range; Bandwidth; Capacitance; Circuits; Cutoff frequency; Electrodes; Gain control; Germanium silicon alloys; Heterojunction bipolar transistors; Optical amplifiers; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741877

Filename

741877