Low threshold current density grating-surface-emitting lasers by OMVPE

Author

Bour, D.P. ; Carlson, N.W. ; Evans, G.A. ; Liew, S.K.

Author_Institution

David Sarnoff Res. Center, Princeton, NJ, USA

fYear

1989

fDate

3-6 Dec. 1989

Firstpage

857

Lastpage

860

Abstract

Grating-surface-emitting (GSE) lasers and laser arrays have been fabricated using InGaAs-AlGaAs and GaAs-AlGaAs material grown by organometallic vapor-phase epitaxy (OMVPE). The threshold behavior of GSEs with various Bragg wavelengths ( lambda /sub B/) near the gain peak is examined. Lowest thresholds are obtained when the grating is strong, and when lambda /sub B/ is set slightly above (by approximately 100 AA) the n=1 e-hh transition, due to lower absorption loss in the passive reflector. Alternatively, absorption losses are great in devices with lambda /sub B/ shorter than the gain peak. In this case, thresholds can be high; in GSE arrays, such an intracavity loss can lead to fast-switching behavior.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor junction lasers; semiconductor laser arrays; vapour phase epitaxial growth; Bragg wavelengths; GaAs-AlGaAs; InGaAs-AlGaAs; OMVPE; absorption losses; fast-switching behavior; grating-surface-emitting lasers; intracavity loss; laser arrays; low threshold current density; organometallic vapor-phase epitaxy; semiconductors; threshold behavior; Absorption; Dielectric substrates; Distributed Bragg reflectors; Gratings; Laser feedback; Optical arrays; Optical materials; Phased arrays; Surface emitting lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International

Conference_Location

Washington, DC, USA

ISSN

0163-1918

Print_ISBN

0-7803-0817-4

Type

conf

DOI

10.1109/IEDM.1989.74188

Filename

74188