DocumentCode
2501961
Title
Turn-off performance comparison of self-firing MOS-thyristor devices for ZVS applications
Author
Breil, M. ; Sanchez, J.L. ; Austin, P. ; Laur, J.-P.
Author_Institution
Lab. d´´Anal. & d´´Archit. des Syst., CNRS, Toulouse, France
fYear
1998
fDate
27-29 Sep 1998
Firstpage
53
Lastpage
56
Abstract
In this paper, design aspects of two self-firing MOS-thyristor associations are given in order to optimize their turn-off performance. For each structure, the investigation is based on an analytical model and 2D simulations using PISCES. Electrical characterization results of fabricated test structures are presented
Keywords
MOS-controlled thyristors; power semiconductor switches; semiconductor device models; 2D simulations; PISCES; ZVS applications; analytical model; design aspects; electrical characterization results; self-firing MOS-thyristor devices; test structures; turnoff performance comparison; zero voltage switching mode; Analytical models; Anodes; Cathodes; Design optimization; Electrons; Insulated gate bipolar transistors; MOSFET circuits; Switches; Thyristors; Zero voltage switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741880
Filename
741880
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