Title :
DC substrate coupling between LDMOS and CMOS devices in Hyperintegration I technology
Author :
Venkatesan, Vasudev ; Nguyen, Quang ; Bose, Amitava ; Parris, Patrice
Author_Institution :
Transp. Syst. Group, Motorola Inc., Mesa, AZ, USA
Abstract :
The DC substrate coupling between NLDMOS and CMOS inverter has been studied in Hyperintegration I technology using conventional protection schemes. Using N-well rings and substrate contact rings sufficiently spaced from the injector as well as the inverter, latchup can be avoided up to output currents of 4 A
Keywords :
BiCMOS integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; power integrated circuits; protection; 4 A; CMOS devices; CMOS inverter; DC substrate coupling; Hyperintegration I technology; LDMOS devices; N-well rings; conventional protection schemes; latchup elimination; substrate contact rings; CMOS technology; Circuits; Couplings; Current measurement; EPROM; Electrons; Fluctuations; Inverters; Isolators; Space technology;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741881
