• DocumentCode
    2501979
  • Title

    DC substrate coupling between LDMOS and CMOS devices in Hyperintegration I technology

  • Author

    Venkatesan, Vasudev ; Nguyen, Quang ; Bose, Amitava ; Parris, Patrice

  • Author_Institution
    Transp. Syst. Group, Motorola Inc., Mesa, AZ, USA
  • fYear
    1998
  • fDate
    27-29 Sep 1998
  • Firstpage
    57
  • Lastpage
    60
  • Abstract
    The DC substrate coupling between NLDMOS and CMOS inverter has been studied in Hyperintegration I technology using conventional protection schemes. Using N-well rings and substrate contact rings sufficiently spaced from the injector as well as the inverter, latchup can be avoided up to output currents of 4 A
  • Keywords
    BiCMOS integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; power integrated circuits; protection; 4 A; CMOS devices; CMOS inverter; DC substrate coupling; Hyperintegration I technology; LDMOS devices; N-well rings; conventional protection schemes; latchup elimination; substrate contact rings; CMOS technology; Circuits; Couplings; Current measurement; EPROM; Electrons; Fluctuations; Inverters; Isolators; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-4497-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1998.741881
  • Filename
    741881
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2501979