DocumentCode
2502067
Title
A comprehensive vertical BJT mismatch model
Author
Drennan, Patrick G. ; McAndrew, Colin C. ; Bates, John
fYear
1998
fDate
27-29 Sep 1998
Firstpage
83
Lastpage
86
Abstract
This paper presents a comprehensive mismatch model for vertical BJTs, valid over bias, geometry, and temperature. Mismatches in gain and collector and base currents are modeled based on the physical process and geometry dependence of SPICE Gummel-Poon model parameters
Keywords
bipolar transistors; semiconductor device models; SPICE Gummel-Poon model parameters; base currents; collector currents; gain; geometry dependence; vertical BJT mismatch model; Analog integrated circuits; Geometry; Integrated circuit modeling; Manufacturing; Mirrors; Radio frequency; Radiofrequency integrated circuits; SPICE; Semiconductor process modeling; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741885
Filename
741885
Link To Document