DocumentCode :
2502146
Title :
Low-loss microwave transmission lines and inductors implemented in a Si/SiGe HBT process
Author :
Laney, David C. ; Larson, Lawrence E. ; Malinowski, John ; Harame, David ; Subbanna, Seshadri ; Volant, Rich ; Case, Michael ; Chan, Paul
Author_Institution :
California Univ., San Diego, La Jolla, CA, USA
fYear :
1998
fDate :
27-29 Sep 1998
Firstpage :
101
Lastpage :
104
Abstract :
Experimental results are presented on a set of microwave transmission line structures and planar inductors fabricated on a thick polyimide dielectric in a production Si/SiGe HBT technology using standard metallization. Microstrip transmission lines with characteristic impedances between 44-73 ohms, with losses at 10 GHz of 0.15 dB/mm and Q´s between 10-14 are presented. Inductances between 0.5-15 nH with Q´s up to 22 are also presented
Keywords :
Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; inductors; integrated circuit technology; losses; microstrip circuits; microstrip lines; silicon; 10 GHz; Si-SiGe; Si/SiGe HBT process; low-loss microwave transmission lines; low-loss planar inductors; production HBT technology; standard metallization; thick polyimide dielectric; Dielectrics; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Microwave technology; Planar transmission lines; Polyimides; Production; Silicon germanium; Transmission lines;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
ISSN :
1088-9299
Print_ISBN :
0-7803-4497-9
Type :
conf
DOI :
10.1109/BIPOL.1998.741889
Filename :
741889
Link To Document :
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