DocumentCode :
2502152
Title :
Optoelectronic Properties Of GaN, AlGaN And AlGaN-GaN Quantum Well Heterostructures
Author :
Kolbas, R.M. ; Krishnankutty, S.
Author_Institution :
North Carolina State University
fYear :
1993
fDate :
19-21 July 1993
Keywords :
Aluminum gallium nitride; Doping; Epitaxial layers; Gallium nitride; Optical films; Photoluminescence; Photonic band gap; Substrates; Temperature; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packaging/Gigabit Networks., LEOS 1993 Summer Topi
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-1284-8
Type :
conf
DOI :
10.1109/LEOSST.1993.696828
Filename :
696828
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2502152
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