Silicon bipolar 3 V power amplifier for GSM900/GSM1800 handsets

Author

Parkhurst, Ray ; Weber, Dave ; Jansen, Bart ; Fang, Wingra ; Hendin, Neil ; Kolk, Jaan ; Repeta, Morris

Author_Institution

Wireless Semicond. Div., Hewlett-Packard Co., Newark, CA, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

117

Lastpage

119

Abstract

A hybrid dual band Power Amplifier Module (PAM) for GSM900/GSM1800 mobile phones is described. The PAM utilizes Nortel´s double-poly self-aligned silicon NPN transistors and HP´s RF MultiPak packaging technology. The PAM operates directly from the mobile phone battery over the 2.7 V to 4.5 V range

Keywords

UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; cellular radio; elemental semiconductors; hybrid integrated circuits; modules; packaging; printed circuits; silicon; telephone sets; transceivers; 1800 GHz; 2.7 to 4.5 V; 3 V; 900 MHz; GSM mobile phones; GSM900/1800 handsets; HP RF MultiPak packaging technology; Nortel; Si; Si bipolar power amplifier; Si n-p-n transistors; double-poly self-aligned NPN transistors; dual band power amplifier module; four-layer PCB; hybrid design; mobile phone battery operation; Batteries; Dual band; Mobile handsets; Packaging; Power amplifiers; Radio frequency; Semiconductor optical amplifiers; Silicon; Switches; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741894

Filename

741894