QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications

Author

Pruijmboom, Armand ; Szmyd, David ; Brock, Reinhard ; Wall, Ralph ; Morris, Neil ; Fong, Keng ; Jovenin, Fabrice

Author_Institution

Philips Semicond., Albuquerque, NM, USA

fYear

1998

fDate

27-29 Sep 1998

Firstpage

120

Lastpage

123

Abstract

QUBiC3, a 0.5 μm BiCMOS manufacturing technology is presented. The technology features a double-poly NPN transistor with fT=30 GHz, fmax=60 GHz and NFmin at 2 GHz=0.64 dB, added to a stand-alone CMOS technology. It also includes high-quality passive components and lateral PNP transistors. Low-K dielectrics and a thick fourth layer of metal provide minimized back-end parasitics and high-Q inductors. These features provide increased speed and a higher degree of system integration in wireless communications circuits

Keywords

BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit manufacture; integrated circuit technology; radio equipment; 0.5 micron; 0.64 dB; 30 GHz; 60 GHz; QUBiC3; double-poly NPN transistor; high-Q inductors; high-quality passive components; lateral PNP transistors; low-K dielectrics; manufacturing technology; submicron BiCMOS production technology; wireless telecommunication applications; BiCMOS integrated circuits; CMOS process; CMOS technology; Frequency; Inductors; Manufacturing processes; Production; Q factor; Varactors; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741896

Filename

741896