Title :
QUBiC3: a 0.5 μm BiCMOS production technology, with fT=30 GHz, fmax=60 GHz and high-quality passive components for wireless telecommunication applications
Author :
Pruijmboom, Armand ; Szmyd, David ; Brock, Reinhard ; Wall, Ralph ; Morris, Neil ; Fong, Keng ; Jovenin, Fabrice
Author_Institution :
Philips Semicond., Albuquerque, NM, USA
Abstract :
QUBiC3, a 0.5 μm BiCMOS manufacturing technology is presented. The technology features a double-poly NPN transistor with fT=30 GHz, fmax=60 GHz and NFmin at 2 GHz=0.64 dB, added to a stand-alone CMOS technology. It also includes high-quality passive components and lateral PNP transistors. Low-K dielectrics and a thick fourth layer of metal provide minimized back-end parasitics and high-Q inductors. These features provide increased speed and a higher degree of system integration in wireless communications circuits
Keywords :
BiCMOS integrated circuits; MMIC; UHF integrated circuits; integrated circuit manufacture; integrated circuit technology; radio equipment; 0.5 micron; 0.64 dB; 30 GHz; 60 GHz; QUBiC3; double-poly NPN transistor; high-Q inductors; high-quality passive components; lateral PNP transistors; low-K dielectrics; manufacturing technology; submicron BiCMOS production technology; wireless telecommunication applications; BiCMOS integrated circuits; CMOS process; CMOS technology; Frequency; Inductors; Manufacturing processes; Production; Q factor; Varactors; Wireless communication;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741896
