DocumentCode :
2502440
Title :
A Memory Failure Pattern Analyzer for memory diagnosis and repair
Author :
Lin, Bing-Yang ; Lee, Mincent ; Wu, Cheng-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
234
Lastpage :
239
Abstract :
As VLSI technology advances and memories occupy more and more area in a typical SOC, memory diagnosis has become an important issue. In this paper, we propose the Memory Failure Pattern Analyzer (MFPA), which is developed for different memories and technologies that are currently used in the industry. The MFPA can locate weak regions of the memory array, i.e., those with high failure rate. It can also be used to analyze faulty-cell/defect distributions automatically. We also propose a new defect distribution model which has 1-12 times higher accuracy than other theoretical models. Based on this model, we propose a defect-spectrum-based methodology to identify critical failure patterns from failure bitmaps. These failure patterns can further be translated to corresponding defects by our memory fault simulator (RAMSES) and physical-level failure analysis tool (FAME). In an industrial case, the MFPA fits the defect distribution with the proposed model, which has 12 times higher accuracy than the Poisson distribution. With our model, it further identifies two special failure patterns from 132,488 faulty 4-Mb macros in 1.2 minutes.
Keywords :
VLSI; failure analysis; fault diagnosis; integrated circuit reliability; maintenance engineering; parameter estimation; statistical distributions; storage management chips; system-on-chip; FAME; MFPA; Poisson distribution; RAMSES; SoC; VLSI technology; critical failure pattern identification; defect distribution model; defect-spectrum-based methodology; faulty-cell analysis; memory array; memory diagnosis; memory failure pattern analyzer; memory fault simulator; memory repair; physical-level failure analysis tool; storage capacity 4 Mbit; time 1.2 min; Redundancy; SOC; builtin-self-repair (BISR); memory diagnosis; redundancy analysis; yield improvement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Test Symposium (VTS), 2012 IEEE 30th
Conference_Location :
Hyatt Maui, HI
ISSN :
1093-0167
Print_ISBN :
978-1-4673-1073-4
Type :
conf
DOI :
10.1109/VTS.2012.6231059
Filename :
6231059
Link To Document :
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