DocumentCode
2502564
Title
Parametric optimization on optical properties of long-wavelength GaInNAs quantum well lasers
Author
Alias, M.S. ; Maskuriy, F. ; Faiz, F. ; Mitani, S.M.
Author_Institution
TM R&D (TMR&D), Adv. Phys. Technol. Lab., Cyberjaya, Malaysia
fYear
2012
fDate
1-3 Oct. 2012
Firstpage
14
Lastpage
17
Abstract
Optical properties of strained GaInNAs/GaAs quantum well (QW) is investigated using the many-body effects theory. The theoretical transition energies and GaNAs bowing parameter are fitted into photoluminescence (PL) spectrum from experiment. The theoretical results of PL spectrum and light-current-voltage characteristic shows a very good agreement with the experimental results.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical materials; photoluminescence; quantum well lasers; GaInNAs-GaAs; bowing parameter; light-current-voltage characteristic; long wavelength quantum well lasers; many-body effects theory; optical properties; parametric optimization; photoluminescence spectra; Diode lasers; Gallium arsenide; Laser theory; Molecular beam epitaxial growth; Optical device fabrication; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics (ICP), 2012 IEEE 3rd International Conference on
Conference_Location
Penang
Print_ISBN
978-1-4673-1461-9
Type
conf
DOI
10.1109/ICP.2012.6379888
Filename
6379888
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