• DocumentCode
    2502609
  • Title

    0.5 μm/60 GHz fmax implanted base Si bipolar technology

  • Author

    Böck, J. ; Meister, T.F. ; Knapp, H. ; Aufinger, K. ; Wurzer, M. ; Gabl, R. ; Pohl, M. ; Boguth, S. ; Franosch, M. ; Treitinger, L.

  • Author_Institution
    Siemens AG, Munich, Germany
  • fYear
    1998
  • fDate
    27-29 Sep 1998
  • Firstpage
    160
  • Lastpage
    163
  • Abstract
    A 0.5 μm silicon bipolar technology for mixed digital/analogue RF applications is described. Transit frequencies of 51 GHz are achieved using low-energy implantation and subsequent RTP for base doping. A salicide layer serves to reduce base resistance. This enables maximum oscillation frequencies of 60 GHz and 14 ps ECL gate delay at the expense of only one additional mask in comparison to a silicon bipolar production technology
  • Keywords
    UHF integrated circuits; bipolar MMIC; elemental semiconductors; integrated circuit technology; ion implantation; mixed analogue-digital integrated circuits; rapid thermal processing; silicon; 0.5 micron; 14 ps; 23.5 GHz; 51 GHz; 60 GHz; RTP; Si:BF2; base doping; base resistance reduction; implanted base Si bipolar technology; low-energy implantation; mixed digital/analogue RF applications; salicide layer; Doping profiles; Electrodes; Fabrication; Finishing; Impedance measurement; Isolation technology; Metallization; Resists; Silicides; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-4497-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1998.741913
  • Filename
    741913
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2502609