DocumentCode
2502651
Title
Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs
Author
Gogineni, Usha ; Niu, Guofu ; Mathew, Suraj J. ; Cressler, John D. ; Ahlgren, David C.
Author_Institution
Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
fYear
1998
fDate
27-29 Sep 1998
Firstpage
172
Lastpage
175
Abstract
We investigate the degradation in current gain and low-frequency noise under reverse emitter-base (EB) stress due to hot electrons (Forward Collector stress) and hot holes (Open Collector Stress). The results show that the mechanisms for degradation by hot electrons and hot holes are different, as opposed to previous assumptions
Keywords
CVD coatings; Ge-Si alloys; heterojunction bipolar transistors; hot carriers; semiconductor device noise; semiconductor device reliability; semiconductor materials; LF noise degradation; SiGe; UHV/CVD SiGe HBTs; current gain degradation; forward collector stress; hot electrons; hot holes; low-frequency noise; open collector stress; reverse emitter-base stress; Acceleration; Charge carrier processes; Degradation; Electron emission; Electron traps; Hot carriers; Kinetic energy; Low-frequency noise; Stress; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location
Minneapolis, MN
ISSN
1088-9299
Print_ISBN
0-7803-4497-9
Type
conf
DOI
10.1109/BIPOL.1998.741917
Filename
741917
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