Title :
Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs
Author :
Gogineni, Usha ; Niu, Guofu ; Mathew, Suraj J. ; Cressler, John D. ; Ahlgren, David C.
Author_Institution :
Microelectron. Sci. & Technol. Center, Auburn Univ., AL, USA
Abstract :
We investigate the degradation in current gain and low-frequency noise under reverse emitter-base (EB) stress due to hot electrons (Forward Collector stress) and hot holes (Open Collector Stress). The results show that the mechanisms for degradation by hot electrons and hot holes are different, as opposed to previous assumptions
Keywords :
CVD coatings; Ge-Si alloys; heterojunction bipolar transistors; hot carriers; semiconductor device noise; semiconductor device reliability; semiconductor materials; LF noise degradation; SiGe; UHV/CVD SiGe HBTs; current gain degradation; forward collector stress; hot electrons; hot holes; low-frequency noise; open collector stress; reverse emitter-base stress; Acceleration; Charge carrier processes; Degradation; Electron emission; Electron traps; Hot carriers; Kinetic energy; Low-frequency noise; Stress; Tunneling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741917
