Title :
Suppression of substrate injection by RESURF LDMOS devices in a smart power technology for 20-30 V applications
Author :
Zhu, R. ; Parthasarathy, V. ; Capilla, J. ; Peterson, W. ; Bacchi, M. ; Zunino, M. ; Baird, R.
Author_Institution :
Transp. Silicon Technol. Center, Motorola Inc., Mesa, AZ, USA
Abstract :
Suppression of substrate injection has been achieved by integration of a RESURF LDMOS device in a 20-30 V smart power technology. A successful use of the single n-implant for both depletion mode NMOS and RESURF LDMOS results in a dramatic increase in performance and functionality of this technology with virtually no extra process complexity
Keywords :
BiCMOS analogue integrated circuits; integrated circuit technology; power integrated circuits; 20 to 30 V; RESURF LDMOS devices; analog BiCMOS process flow; depletion mode NMOS; single n-implant; smart power technology; substrate injection suppression; Application software; BiCMOS integrated circuits; CMOS technology; Diodes; Implants; Low voltage; MOS devices; Rectifiers; Substrates; Transportation;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741920
