The Mirrored Lateral SCR (MILSCR) as an ESD protection structure for smart power applications

Author

Delage, C. ; Nolhier, N. ; Bafleur, M. ; Dorkel, J.M. ; Hamid, J. ; Givelin, P. ; Lin-Kwang, J.

Author_Institution

Motorola Semicond., Toulouse, France

fYear

1998

fDate

27-29 Sep 1998

Firstpage

191

Lastpage

194

Abstract

In this paper, we first present a methodology for the application of two-dimensional device simulation to ESD events. The correlation of ESD simulation results with experimental data is illustrated by the example of a grounded base n-p-n transistor. Secondly, we present a novel double-polarity ESD protection structure for smart power applications, the Mirrored Lateral SCR (MILSCR): simulated and experimental results are compared

Keywords

electrostatic discharge; failure analysis; power integrated circuits; protection; semiconductor device models; thyristor applications; thyristors; ESD events; ESD simulation; double-polarity ESD protection structure; electrostatic discharge protection; grounded base n-p-n transistor; mirrored lateral SCR; smart power applications; two-dimensional device simulation; Discrete event simulation; Electrostatic discharge; Failure analysis; Heating; Lattices; Power system protection; Temperature; Thermal resistance; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741922

Filename

741922