DocumentCode :
2502772
Title :
High-performance 630-nm Band AlGaInP Strained Multiple Quantum Well Laser Diodes With A Multiquantum Barrier
Author :
Hamada, H. ; Shono, M. ; Honda, S. ; Yodoshi, K. ; Yamaguchi, T. ; Nuna, T.
Author_Institution :
SANYO Electric Co., Ltd.
fYear :
1993
fDate :
19-21 July 1993
Keywords :
Diode lasers; Electron optics; Gas lasers; MOCVD; Power generation; Quantum well devices; Quantum well lasers; Semiconductor lasers; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Microwave Interactions/Visible Semiconductor Lasers/Impact of Fiber Nonlinearities on Lightwave Systems/Hybrid Optoelectronic Integration and Packaging/Gigabit Networks., LEOS 1993 Summer Topi
Conference_Location :
Santa Barbara, CA, USA
Print_ISBN :
0-7803-1284-8
Type :
conf
DOI :
10.1109/LEOSST.1993.696831
Filename :
696831
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2502772
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