Title :
A compact tunneling current and collector breakdown model
Author :
Schröter, M. ; Yan, Z. ; Lee, T.Y. ; Shi, W.
Author_Institution :
Rockwell Semicond. Syst., Newport Beach, CA, USA
Abstract :
Analytical models for base-emitter tunneling current and base-collector breakdown (weak avalanche) are presented. The new formulations are quite simple, contain only two additional model parameters each and incorporate the respective depletion capacitance models. Since the formulations are physics-based, they are easily extended towards lateral scaleability and temperature-dependence. The formulations can be directly implemented and deployed in compact BJT models for circuit simulation, and allow a straightforward parameter extraction. The models show good agreement with measured results over bias and temperature for device structures with different geometries
Keywords :
avalanche breakdown; bipolar transistors; capacitance; equivalent circuits; semiconductor device breakdown; semiconductor device models; tunnelling; base-collector breakdown; base-emitter tunneling current; circuit simulation; collector breakdown model; compact BJT model; depletion capacitance models; lateral scaleability; parameter extraction; temperature dependence; tunneling current model; weak avalanche; Analytical models; Avalanche breakdown; Capacitance; Circuit simulation; Electric breakdown; Geometry; Parameter extraction; Solid modeling; Temperature; Tunneling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741925