Title :
Prediction of thermal resistance in trench isolated bipolar device structures
Author :
Walkey, D.J. ; Smy, T.J. ; Tran, H. ; Marchesan, D. ; Schröter, M.
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
Abstract :
A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel´s 0.35 μm trench isolated 35 GHz fT bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers
Keywords :
bipolar integrated circuits; integrated circuit modelling; isolation technology; thermal analysis; thermal resistance; 0.35 micron; 35 GHz; Nortel process; thermal resistance prediction; trench isolated bipolar device structures; Electrical resistance measurement; Geometry; Integral equations; Power generation; Predictive models; Semiconductor device modeling; Solid modeling; Temperature; Thermal conductivity; Thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-4497-9
DOI :
10.1109/BIPOL.1998.741926
