• DocumentCode
    2502832
  • Title

    Prediction of thermal resistance in trench isolated bipolar device structures

  • Author

    Walkey, D.J. ; Smy, T.J. ; Tran, H. ; Marchesan, D. ; Schröter, M.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • fYear
    1998
  • fDate
    27-29 Sep 1998
  • Firstpage
    207
  • Lastpage
    210
  • Abstract
    A model is proposed for predicting the thermal resistance of a trench isolated device structure. The model prediction for Nortel´s 0.35 μm trench isolated 35 GHz fT bipolar process is found to be within an average of 5% of measured values for three different emitter lengths over two wafers
  • Keywords
    bipolar integrated circuits; integrated circuit modelling; isolation technology; thermal analysis; thermal resistance; 0.35 micron; 35 GHz; Nortel process; thermal resistance prediction; trench isolated bipolar device structures; Electrical resistance measurement; Geometry; Integral equations; Power generation; Predictive models; Semiconductor device modeling; Solid modeling; Temperature; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-4497-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1998.741926
  • Filename
    741926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2502832