Improved extraction method for the emitter resistance of bipolar transistors

Author

Gabl, R. ; Reisch, M. ; Pohl, M.

Author_Institution

Dept. of Corporate Technol., Siemens AG, Munich, Germany

fYear

1998

fDate

27-29 Sep 1998

Firstpage

211

Lastpage

214

Abstract

The open-collector method for determination of the emitter series resistance is analysed. From basic semiconductor equations an accurate relation for the collector-emitter voltage which is valid for high injection into the low-doped epitaxial collector region is derived. This new description allows us to predict the non-linear V_CE(I_E) behaviour which depends on properties of the collector region and the parasitic p-n-p transistor. Furthermore the relation provides an improved extraction procedure for the emitter resistance from open-collector measurements. This method is applied to advanced integrated bipolar transistors and its accuracy is demonstrated by comparing the results to that of the Ning and Tang (1984) method and by device simulations

Keywords

bipolar integrated circuits; bipolar transistors; electric resistance; integrated circuit modelling; semiconductor device models; advanced integrated bipolar transistors; bipolar transistor emitter resistance; collector region; collector-emitter voltage; extraction method; high injection; low-doped epitaxial collector region; nonlinear V-I behaviour; open-collector measurements; open-collector method; parasitic p-n-p transistor; semiconductor equations; series resistance; Bipolar transistors; Conductors; Electrical resistance measurement; Germanium silicon alloys; Identity-based encryption; Microelectronics; Nonlinear equations; Physics; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1998. Proceedings of the 1998

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-4497-9

Type

conf

DOI

10.1109/BIPOL.1998.741927

Filename

741927