DocumentCode
2502897
Title
Silicon evaluation of faster than at-speed transition delay tests
Author
Chakravarty, S. ; Devta-Prasanna, N. ; Gunda, A. ; Ma, J. ; Yang, F. ; Guo, H. ; Lai, R. ; Li, D.
Author_Institution
LSI Corp., Milpitas, CA, USA
fYear
2012
fDate
23-25 April 2012
Firstpage
80
Lastpage
85
Abstract
Researchers, based primarily on theoretical analysis of different coverage metric, have proposed the need to cover small delay defect (SDD). There is very little silicon data justifying the need to add SDD tests to the manufacturing flow. This paper attempts to fill this gap. A high volume manufacturing experiment to ascertain the added screening capability of defective parts and infant mortality of FAST_TDF tests are described. Quantitative silicon data are presented.
Keywords
elemental semiconductors; logic testing; silicon; FAST_TDF tests; faster than at-speed transition delay tests evaluation; high volume manufacturing; small delay defect; Clocks; Iron; Logic gates; Silicon; TV; Faster than at-speed Transition Delay Tests; Long Path Transition Delay Tests; Small Delay Defects;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Test Symposium (VTS), 2012 IEEE 30th
Conference_Location
Hyatt Maui, HI
ISSN
1093-0167
Print_ISBN
978-1-4673-1073-4
Type
conf
DOI
10.1109/VTS.2012.6231084
Filename
6231084
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