• DocumentCode
    2502897
  • Title

    Silicon evaluation of faster than at-speed transition delay tests

  • Author

    Chakravarty, S. ; Devta-Prasanna, N. ; Gunda, A. ; Ma, J. ; Yang, F. ; Guo, H. ; Lai, R. ; Li, D.

  • Author_Institution
    LSI Corp., Milpitas, CA, USA
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    80
  • Lastpage
    85
  • Abstract
    Researchers, based primarily on theoretical analysis of different coverage metric, have proposed the need to cover small delay defect (SDD). There is very little silicon data justifying the need to add SDD tests to the manufacturing flow. This paper attempts to fill this gap. A high volume manufacturing experiment to ascertain the added screening capability of defective parts and infant mortality of FAST_TDF tests are described. Quantitative silicon data are presented.
  • Keywords
    elemental semiconductors; logic testing; silicon; FAST_TDF tests; faster than at-speed transition delay tests evaluation; high volume manufacturing; small delay defect; Clocks; Iron; Logic gates; Silicon; TV; Faster than at-speed Transition Delay Tests; Long Path Transition Delay Tests; Small Delay Defects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Test Symposium (VTS), 2012 IEEE 30th
  • Conference_Location
    Hyatt Maui, HI
  • ISSN
    1093-0167
  • Print_ISBN
    978-1-4673-1073-4
  • Type

    conf

  • DOI
    10.1109/VTS.2012.6231084
  • Filename
    6231084