DocumentCode :
2502914
Title :
A Bayesian-based process parameter estimation using IDDQ current signature
Author :
Shintani, Michihiro ; Sato, Takashi
Author_Institution :
Dept. of Commun. & Comput. Eng., Kyoto Univ., Kyoto, Japan
fYear :
2012
fDate :
23-25 April 2012
Firstpage :
86
Lastpage :
91
Abstract :
Post-fabrication performance compensation and adaptive delay testing are effective means to improve yield and reliability of LSIs. In these methods, process parameter estimation plays a key role. In this paper, we propose a novel technique for accurate on-chip process parameter estimation. The proposed technique is based on Bayes´ theorem, in which on-chip parameters, such as threshold voltages, are estimated by current signatures obtained within a regular IDDQ testing. No additional circuit and additional measurements are required for the purpose of estimation. Numerical experiments demonstrate that the proposed technique can achieve less than 10 mV accuracy in estimating threshold voltages.
Keywords :
Bayes methods; integrated circuit testing; integrated logic circuits; Bayes theorem; Bayesian-based process parameter estimation; IDDQ current signature; on-chip parameter; on-chip process parameter estimation; Bayesian methods; Estimation; Leakage current; Libraries; Parameter estimation; Semiconductor device measurement; Testing; Bayes´ theorem; IDDQ Testing; Statistical Leakage Current Analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Test Symposium (VTS), 2012 IEEE 30th
Conference_Location :
Hyatt Maui, HI
ISSN :
1093-0167
Print_ISBN :
978-1-4673-1073-4
Type :
conf
DOI :
10.1109/VTS.2012.6231085
Filename :
6231085
Link To Document :
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