Preparation of high quality a-SiGe:H films and its application to the high efficiency triple-junction amorphous solar cells

Author

Sato, K. ; Kawabata, K. ; Terazono, S. ; Ishihara, T. ; Sasaki, H. ; Deguchi, M. ; Itagaki, T. ; Morikawa, H. ; Aiga, M. ; Fujikawa, K.

Author_Institution

Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1988

fDate

1988

Firstpage

73

Abstract

The optical and electrical properties of a-SiGe:H films with optical gaps of 1.45-1.55 eV were evaluated and the corresponding solar cell performances were compared. Taking into account the influence of Ge and hydrogen content, the deposition conditions were chosen so as to obtain films with high ratios of photoconductivity to dark conductivity. An enhancement in the spectral response of a-SiGe:H p-i-n cells at long wavelengths was obtained as a result of an improvement in film quality and the utilization of a black reflector. High-efficiency triple-junction solar cells using the a-SiGe:H p-i-n cells as bottom cells were fabricated to achieve 9.5% efficiency for a cell size of 100 cm².

Keywords

Ge-Si alloys; amorphous semiconductors; energy gap; hydrogen; optical constants; p-n junctions; photoconductivity; plasma deposition; semiconductor growth; solar cells; 9.5 percent; SiGe:H films; a-SiGe:H films; black reflector; dark conductivity; deposition conditions; electrical properties; glow discharge deposition; high efficiency; optical gaps; p-i-n cells; photoconductivity; semiconductor; spectral response; triple-junction amorphous solar cells; Alloying; Amorphous materials; Conductive films; Conductivity; Degradation; Hydrogen; Lighting; Optical films; PIN photodiodes; Performance evaluation; Photoconductivity; Photovoltaic cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105658

Filename

105658