Preparation and properties of high deposition rate a-Si:H films and solar cells using disilane

Author

Bhat, P.K. ; Marshall, C. ; Sandwisch, J. ; Chatham, H. ; Schropp, R.E.I. ; Madan, A.

Author_Institution

Glasstech Solar Inc., Wheatridge, CO, USA

fYear

1988

fDate

1988

Firstpage

91

Abstract

The authors report material and solar cell properties for a-Si:H intrinsic layers deposited at rates of up to 20 A-s^-1 using RF plasma-enhanced chemical vapor deposition in disilane. The optoelectronic properties of a-Si:H thin films and the efficiencies of solar cells fabricated with these intrinsic layers show a weak dependence on the deposition rate of the intrinsic a-Si:H films. Solar cells with efficiencies of 9 and 8% with the intrinsic layers deposited at approximately 10 and approximately 20 A-s^-1, respectively, were obtained. Data on the stability of disilane solar cells are also presented.

Keywords

amorphous semiconductors; elemental semiconductors; hydrogen; plasma CVD coatings; semiconductor growth; semiconductor thin films; silicon; solar cells; RF plasma-enhanced chemical vapor deposition; Si:H; disilane; high deposition rate; intrinsic layers; optoelectronic properties; semiconductor thin films; solar cells; stability; thin films; Amorphous silicon; Chemical vapor deposition; Electrons; Material properties; Photovoltaic cells; Plasma chemistry; Plasma materials processing; Plasma properties; Polymer films; Radio frequency; Semiconductor films; Sputtering; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE

Conference_Location

Las Vegas, NV, USA

Type

conf

DOI

10.1109/PVSC.1988.105661

Filename

105661