DocumentCode :
2503147
Title :
New materials and new analysis method for high-efficiency a-Si solar cells
Author :
Nakano, S. ; Nakamura, N. ; Ninomiya, K. ; Tarui, H. ; Matsuyama, T. ; Nishikuni, M. ; Kiyama, S. ; Hishikawa, Y. ; Dohjo, H. ; Tsuda, S. ; Ohnishi, M. ; Kishi, Y. ; Kuwano, Y.
Author_Institution :
Sanyo Electr. Co. Ltd., Osaka, Japan
fYear :
1988
fDate :
1988
Firstpage :
123
Abstract :
The authors present investigations of high-efficiency a-Si solar cells and describe a novel structure for large-area a-Si solar cell submodules. In order to improve the conversion efficiency, B(CH3)3 was applied as a new p-type doping gas, which led to a total-area efficiency of 9.60% for a 10 cm*10 cm integrated-type submodule. Furthermore, a novel analysis method, called the current-separated-analysis method, was developed to obtain key factors for high open-circuit voltage. Based on this analysis, microcrystalline SiC films were investigated using an original plasma chemical vapor deposition method, called the controlled-plasma-magnetron method. An open-circuit voltage of 0.98 V was obtained by using p-type microcrystalline SiC. In addition, a through-hole contact structure was developed for large-area solar cells. Using this structure, the active area can be increased and a high-efficiency submodule obtained.
Keywords :
amorphous semiconductors; elemental semiconductors; plasma CVD coatings; silicon; solar cells; 0.98 V; 9.6 percent; amorphous Si solar cells; controlled-plasma-magnetron method; conversion efficiency; current-separated-analysis method; high-efficiency; microcrystalline SiC films; open-circuit voltage; p-type doping gas; plasma chemical vapor deposition method; semiconductor; through-hole contact structure; Bonding; Boron; Chemical analysis; Chemical vapor deposition; Conductive films; Conductivity; Doping; Magnetic analysis; Optical films; Photonic band gap; Photovoltaic cells; Plasma chemistry; Silicon carbide; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105671
Filename :
105671
Link To Document :
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