DocumentCode :
2503190
Title :
Defects in amorphous silicon germanium alloys
Author :
Fortmann, C.M. ; Tu, J.C.
Author_Institution :
Solarex Corp., Newtown, PA, USA
fYear :
1988
fDate :
1988
Firstpage :
139
Abstract :
The electrical, optical, and stability properties of the materials in the Si1-y-xGexHy (00.43Ge0.52H0.05 with Eg=1.3 eV.
Keywords :
Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; electrical conductivity of amorphous semiconductors and insulators; energy gap; hydrogen; noncrystalline state structure; optical constants; solar cells; Si1-y-xGexHy; a-Si0.43Ge0.52H0.05; amorphous SiGe:H; annealed materials; electrical properties; electron mobility lifetime; electronic transport properties; light-induced effects; optical bandgap; optical properties; semiconductor; solar cells; stability; Amorphous silicon; Electron mobility; Electron optics; Germanium alloys; Hydrogen; Lighting control; Optical materials; Photonic band gap; Photovoltaic cells; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
Type :
conf
DOI :
10.1109/PVSC.1988.105675
Filename :
105675
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2503190
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