Title :
A 27 GHz 20 ps PNP technology
Author :
Warnock, J. ; Lu, P. ; Chen, T. ; Toh, K.Y. ; Cressler, J.D. ; Jenkins, K.A. ; Tang, D.D. ; Burghartz, J. ; Sun, J.Y.C. ; Chuang, C.T. ; Li, G.P. ; Ning, T.H.
Author_Institution :
IBM Thomas Watson Res. Center, Yorktown Heights, NY, USA
Abstract :
Summary form only given. A high-performance double-poly p-n-p technology, with features allowing it to be easily integrated into a more general complementary bipolar process, is described. These advanced p-n-p transistors have 80-nm-wide ion-implanted bases and optimized emitter and collector dopant profiles and are fabricated on a thin p-type epilaver in order to achieve high collector current driving capability. The devices have a measured cutoff frequency of 27 GHz, making them the fastest silicon p-n-p bipolar transistors reported to date. Experimental results on the device characteristics are presented.<>
Keywords :
bipolar transistors; doping profiles; semiconductor technology; 27 GHz; 80 nm; collector current driving capability; collector dopant profiles; complementary bipolar process; cutoff frequency; device characteristics; double-poly p-n-p technology; emitter dopant profiles; ion-implanted bases; p-n-p bipolar transistors; thin p-type epilaver; Contact resistance; Current density; Current measurement; Delay; Density measurement; Electric resistance; Electron devices; Integrated circuit technology; Silicon; Transistors;
Conference_Titel :
Electron Devices Meeting, 1989. IEDM '89. Technical Digest., International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-0817-4
DOI :
10.1109/IEDM.1989.74201
