Title :
Electron mobility and lifetime in a-Si1-xGex:H
Author :
Nebel, C.E. ; Weller, H.C. ; Bauer, G.H.
Author_Institution :
Inst. fur Phys. Elektron., Stuttgart Univ., West Germany
Abstract :
A reduction in the mobility due to additional localization at the conduction band edge in a-SiGe:H alloys has been measured in transient photoconductivity experiments. The slope of the conduction band tail flattens as the concentration is increased, reflecting the additional chemical disorder introduced by the Ge. The neutral dangling bond density remains nearly unchanged for CGe\n\n\t\t
Keywords :
Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; hydrogen; semiconductor materials; solar cells; DC dark-conductivity measurements; Fermi-level position; amorphous Si1-xGex:H solar cells; conduction band edge; doping efficiency; electron lifetime; electron mobility; semiconductors; temperature-dependent shift; transient photoconductivity; Bonding; Charge carrier density; Charge carrier lifetime; Chemicals; Dispersion; Doping; Electron mobility; Energy capture; Extrapolation; Frequency; Photoconductivity; Position measurement; Tail; Temperature dependence;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105693
