• DocumentCode
    2503542
  • Title

    Electron mobility and lifetime in a-Si1-xGex:H

  • Author

    Nebel, C.E. ; Weller, H.C. ; Bauer, G.H.

  • Author_Institution
    Inst. fur Phys. Elektron., Stuttgart Univ., West Germany
  • fYear
    1988
  • fDate
    1988
  • Firstpage
    229
  • Abstract
    A reduction in the mobility due to additional localization at the conduction band edge in a-SiGe:H alloys has been measured in transient photoconductivity experiments. The slope of the conduction band tail flattens as the concentration is increased, reflecting the additional chemical disorder introduced by the Ge. The neutral dangling bond density remains nearly unchanged for CGe\n\n\t\t
  • Keywords
    Ge-Si alloys; amorphous semiconductors; carrier lifetime; carrier mobility; hydrogen; semiconductor materials; solar cells; DC dark-conductivity measurements; Fermi-level position; amorphous Si1-xGex:H solar cells; conduction band edge; doping efficiency; electron lifetime; electron mobility; semiconductors; temperature-dependent shift; transient photoconductivity; Bonding; Charge carrier density; Charge carrier lifetime; Chemicals; Dispersion; Doping; Electron mobility; Energy capture; Extrapolation; Frequency; Photoconductivity; Position measurement; Tail; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
  • Conference_Location
    Las Vegas, NV, USA
  • Type

    conf

  • DOI
    10.1109/PVSC.1988.105693
  • Filename
    105693
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2503542