Title :
Fabrication of amorphous silicon solar cells with high performance such as fill factor of 0.77 and conversion efficiency of 12.0%
Author :
Fukuda, N. ; Tanaka, H. ; Miyachi, K. ; Ashida, Y. ; Ohashi, Y. ; Nitta, A.
Author_Institution :
Mitsui Toatsu Chem. Inc., Yokohama, Japan
Abstract :
The fill factor for hydrogenated amorphous silicon solar cells was improved by using an intrinsic layer with lower space-charge density, and by using a p/i interface layer with a small amount of hydrogen evolved in the low-temperature region. Using these improvements as well as a high-performance p-type layer for the fabrication of solar cells resulted in a high conversion efficiency. The fabrication and properties of solar cells are presented.
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; silicon; solar cells; 12 percent; amorphous Si:H solar cells; conversion efficiency; elemental semiconductors; fabrication; fill factor; high-performance p-type layer; intrinsic layer; p/i interface layer; space-charge density; Amorphous materials; Amorphous silicon; Fabrication; Hydrogen; Optical films; Photovoltaic cells; Plasma chemistry; Plasma measurements; Plasma properties; Power system reliability; Space charge;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105696
