Title :
Characterization of a-Si:H:F thin films and devices
Author :
Pernisz, U.C. ; Tarhay, Leo
Author_Institution :
Dow Corning Corp., Midland, MI, USA
Abstract :
Difluorosilane was used as a precursor in a plasma-enhanced chemical vapor deposition process for preparing intrinsic, P- and B-doped a-Si:H,F material on glass and Mo-coated substrates. Dark conductivity, photoconductivity, and optical absorption were measured to characterize the material. Devices were made by evaporating Au, Ag, and Al electrodes in sandwich configuration. From the temperature dependence of the device J-V characteristics, Richardson constant and the Schottky barrier height for intrinsic and for lightly doped material could be determined for the three metals on this amorphous semiconductor. At high forward and reverse bias, square root (Schottky effect) and power law (SCLC) J-V characteristics were observed.
Keywords :
amorphous semiconductors; elemental semiconductors; fluorine; hydrogen; plasma CVD coatings; semiconductor thin films; silicon; solar cells; J-V characteristics; Richardson constant; Schottky barrier; Si:H,F solar cells; dark conductivity; electrodes; optical absorption; photoconductivity; plasma-enhanced chemical vapor deposition; semiconductor thin films; Conducting materials; Optical materials; Photoconducting materials; Plasma chemistry; Plasma devices; Plasma materials processing; Plasma measurements; Plasma temperature; Semiconductor materials; Thin film devices;
Conference_Titel :
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/PVSC.1988.105698
