Title :
A new 200 A, 500 V cascade BIMOS power module for high power and high frequency inverter applications
Author :
Majumdar, Gourab ; Yuu, Y. ; Iida, T.
Author_Institution :
Mitsubishi, Electr. Corp., Osaka, Japan
Abstract :
The development of a high-power cascade BIMOS module is reported. A cascade BIMOS is a Darlington configuration of a high-voltage MOSFET and a bipolar transistor of equal voltage rating, where the MOSFET constitutes the input stage and drives the output-stage bipolar transistor. The module is rated at 500 V, 200 A and is designed for high-power and high-frequency operation. The merits of the module are illustrated by means of various static and dynamic characteristics, ratings and performances
Keywords :
bipolar transistors; insulated gate field effect transistors; invertors; power transistors; 200 A; 500 V; Darlington configuration; MOSFET; bipolar transistor; cascade BIMOS power module; dynamic characteristics; inverter; performances; power transistors; ratings; static characteristics; Bipolar transistors; Capacitance; Circuits; Frequency; Insulated gate bipolar transistors; Inverters; MOSFETs; Multichip modules; Threshold voltage; Voltage control;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1988. APEC '88. Conference Proceedings 1988., Third Annual IEEE
Conference_Location :
New Orleans, LA
DOI :
10.1109/APEC.1988.10570
