DocumentCode
2503801
Title
Efficiency improvements in GaAs-on-Si solar cells
Author
Vernon, S.M. ; Tobin, S.P. ; Haven, V.E. ; Bajgar, C. ; Dixon, T.M. ; Al-Jassim, M.M. ; Ahrenkiel, R.K. ; Emery, K.A.
Author_Institution
Spire Corp., Bedford, MA, USA
fYear
1988
fDate
26-30 Sept. 1988
Firstpage
481
Abstract
GaAs grown directly on silicon substrates has the potential for reducing the cost and weight of single-junction GaAs cells, as well as enabling a III-VlSi monolithic tandem technology. This paper reports the achievement of a GaAs-on-Si solar cell having an efficiency of 17.6% (one-sun, AM1.5 25°C, SERI measurement), which is the highest reported value for a cell of this structure. A GaAs-on-GaAs cell recently fabricated has been measured at SERI to be 24.3% efficient (AM1.5), which is the highest one-sun value ever reported for any cell.
Keywords
Electrons; Frequency; Gallium arsenide; Glow discharges; Photovoltaic cells; Photovoltaic systems; Plasma density; Plasma properties; Plasma sheaths; Solar power generation; Transmission electron microscopy; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE
Conference_Location
Las Vegas, NV, USA
Type
conf
DOI
10.1109/PVSC.1988.105704
Filename
105704
Link To Document