Title :
IGT-gated bipolar MOS hybrid cascode switch
Author_Institution :
Dept. Electr. & Comput. Eng., Victoria Univ., BC, Canada
Abstract :
A three-terminal combinational switch which employs an insulated gate transistor (IGT) as a driver for a bipolar transistor in cascode with a low-voltage MOSFET is proposed. The desirable and limiting characteristics of IGT and IGT/bipolar cascode connection are reviewed. The operation details, advantages and device selection criteria of the proposed switch are discussed. The hybrid switch has improved performance over IGT/bipolar cascode and FET-gated bipolar transistor (FGT) switches. Compared to FGT, the proposed switch has decreased on-state drop, decreased chip area requirement, and higher dv/ dt rating. This allows its use in high-voltage, high-current and high-frequency switching converters. Experimental results obtained using this switch (implemented using the discrete devices) in a chopper circuit are presented
Keywords :
bipolar transistors; insulated gate field effect transistors; semiconductor switches; IGT/bipolar cascode connection; bipolar MOS hybrid cascode switch; chopper circuit; decreased chip area requirement; decreased on-state drop; device selection criteria; dv/dt rating; high-current; high-frequency switching converters; high-voltage; insulated gate transistor; low-voltage MOSFET; three-terminal combinational switch; Bipolar transistors; Driver circuits; Frequency conversion; Insulated gate bipolar transistors; Insulation; Low voltage; MOSFET circuits; Power MOSFET; Switches; Switching converters;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 1988. APEC '88. Conference Proceedings 1988., Third Annual IEEE
Conference_Location :
New Orleans, LA
DOI :
10.1109/APEC.1988.10571
